Structures of sram bit cells

ABSTRACT

A SRAM bit cell and an associated method of producing the SRAM bit cell with improved performance and stability is provided. In one configuration, channel mobility of the transistors within the SRAM bit cell may be adjusted to provide improved stability. In order to adjust the channel mobility, a stress memorization technique may be used, a wide spacer may be used, germanium may be implanted on tensile stress silicon nitride, a compressive liner may be used or silicon germanium may be embedded in one or more of the devices in the cell. In another configuration, the gate capacitance of each device within the SRAM bit cell may be adjusted to achieve high SRAM yield. For instance, a thick gate oxide may be used, phosphorous pre-doping may be used or fluorine pre-doping may be used in one or more of the devices within the cell.

BACKGROUND

Static random access memory (SRAM) cells have occupied a large portionof the Large Scale Integrated (LSI) device chip market as higher volumememory has become a desired feature. However, as further chipdevelopments are made, enhancing performance and stability of SRAM cellsremains an important factor.

To improve performance and stability of SRAM cells, channel widths andlengths are adjusted to produce a high SRAM yield. However, this methodhas become less effective when producing high density SRAM cells becausepull-down field effect transistors (FETs) with wide channel width andpass-gate FETs with wide gate length increase SRAM array size. Inaddition, non-constant gate pitch degrades the lithography margin. As aresult, gate length variation becomes large, which degrades SRAMstability. Further, constantly adjusting channel widths and lengthsmakes cell design more difficult across a chip. Finally, doping agentout-diffusion and/or process induced stress tend to cause unexpectedelectrical behavior in SRAM FETs. Therefore, actual on current ratiosmay be altered from the design ratio, thereby making circuit designdifficult.

SUMMARY

This summary is provided to introduce a selection of concepts in asimplified form that are further described below in the DetailedDescription. This summary is not intended to identify key features oressential features of the claimed subject matter.

There is a need for an SRAM bit cell structure that can provide improvedperformance and stability. The methods provided maintain the same sizeand shape for each device, while changing the processing technique toenhance channel mobility or adjust gate capacitance to improveperformance. In at least one aspect of the invention, a standard cellsize makes chip designing easier.

In one configuration, channel mobility of the transistors within theSRAM bit cell may be adjusted to provide improved stability. In order toadjust the channel mobility, a stress memorization technique may be usedon pull-down n-type field effect transistors, but not on pass-gaten-type field effect transistors to improve channel mobility. In analternate arrangement, a wide spacer may be used in the pass-gatedevices, but not in the pull-down devices, to improve channel mobility.In yet another arrangement, germanium may be implanted on tensile stresssilicon nitride in the pass-gate region in order to reduce or eliminatetensile stress effect in this region to improve channel mobility. In yetanother arrangement, a compressive liner may be used in the pull-up andpass-gate regions, while a tensile stress liner may be used in thepull-down regions to improve channel mobility. Finally, silicongermanium may be embedded in the pull-up and pass-gate regions to causeuniaxial compressive stress in the Si channel to improve channelmobility.

In another configuration, the gate capacitance of each device within theSRAM bit cell may be adjusted to achieve high SRAM yield. For instance,a thick gate oxide may be used in the pass-gate region, but not on thepull-down region, to adjust gate capacitance.

In another example, phosphorous pre-doping may be used in the pull-downregion, but not in the pass-gate region to adjust gate capacitance. Inyet another example, fluorine pre-doping may be used in the pass-gateregion, but not in the pull-down region to adjust gate capacitance.

These and other aspects of the disclosure will be apparent uponconsideration of the following detailed description of illustrativeembodiments.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete understanding of the present invention and the potentialadvantages thereof may be acquired by referring to the followingdescription of illustrative embodiments in consideration of theaccompanying drawings, in which like reference numbers indicate likefeatures, and wherein:

FIG. 1 is top down image of an SRAM bit cell as known in the prior art.

FIG. 2 is a flow diagram showing illustrative steps of one method ofproducing an SRAM bit cell with improved stability in accordance withone or more aspects of the present invention.

FIG. 3 is a top down image of an SRAM bit cell utilizing stressmemorization technique to improve SRAM stability in accordance with oneor more aspects of the present invention.

FIG. 4A is a top down image of an SRAM bit cell utilizing wide spacersto improve SRAM stability in accordance with one or more aspects of thepresent invention.

FIG. 4B is an alternate depiction of portions of the SRAM bit cell ofFIG. 4A.

FIG. 5 is a top down image of an SRAM bit cell with germanium implantedon tensile stress silicon nitride to improve SRAM stability inaccordance with one or more aspects of the present invention.

FIG. 6 is a top down image of an SRAM bit cell utilizing compressive andtensile liners to improve SRAM stability in accordance with one or moreaspects of the present invention.

FIG. 7 is a top down image of an SRAM bit cell utilizing embeddedsilicon germanium to improve SRAM stability in accordance with one ormore aspects of the present invention.

FIG. 8 is a flow diagram showing illustrative steps of one method ofproducing a high yield SRAM bit cell in accordance with one or moreaspects of the present invention.

FIG. 9 is a top down image of an SRAM bit cell utilizing thick gateoxide to improve SRAM yield in accordance with one or more aspects ofthe present invention.

FIG. 10 is a top down image of an SRAM bit cell utilizing phosphorouspre-doping to improve SRAM yield in accordance with one or more aspectsof the present invention.

FIG. 11 is a top down image of an SRAM bit cell utilizing fluorinepre-doping to improve SRAM yield in accordance with one or more aspectsof the present invention.

FIG. 12 illustrates SRAM cells that are the same size but are processedaccording to one or more aspects of the present invention.

DETAILED DESCRIPTION

The various aspects summarized previously may be embodied in variousforms. The following description shows by way of illustration of variousembodiments and configurations in which the aspects may be practiced. Itis understood that the described embodiments are merely examples, andthat other embodiments may be utilized and structural and functionalmodifications may be made, without departing from the scope of thepresent disclosure.

It is noted that various connections are set forth between elements inthe following description. It is noted that these connections in generaland, unless specified otherwise, may be direct or indirect and that thisspecification is not intended to be limiting in this respect.

FIG. 1 illustrates a top down image of a conventional SRAM bit cell. Thecell includes 6 transistors: two pass-gate n-type field effecttransistors (nFETs) 102, two pull-down nFETs 104 and two pull-up p-typeFETs 106. The beta ratio of each of these transistors is:

${I_{on}({pd})} = {\frac{{\mu ({pd})}{C_{ox}({pd})}}{2} \cdot \frac{W({pd})}{L({pd})} \cdot \left( {V_{g} - {V_{t}({pd})}} \right)^{2}}$${I_{on}({pg})} = {\frac{{\mu ({pg})}{C_{ox}({pg})}}{2} \cdot \frac{W({pg})}{L({pg})} \cdot \left( {V_{g} - {V_{t}({pg})}} \right)^{2}}$${I_{on}({pu})} = {\frac{{\mu ({pu})}{C_{ox}({pu})}}{2} \cdot \frac{W({pu})}{L({pu})} \cdot \left( {V_{g} - {V_{t}({pu})}} \right)^{2}}$

-   -   where:        -   I_(on) is the drain current        -   μ is the channel mobility        -   C_(ox) is the gate capacitance        -   W is the channel width        -   L is the channel length        -   V_(t) is a threshold voltage        -   V_(g) is a gate voltage

To improve the stability of the SRAM cell, the ratio of Ion_((pd)) toIon_((pg)) is of importance. To improve SRAM write margin, the ratio ofpass-gate on current (Ion_((pg))) to pull-up on current (Ion_((pu))) isof importance. These ratios may be important factors for producing highSRAM yield at low voltage operation.

Channel Mobility Adjustment

The ratios described above may be adjusted by adjusting the channelwidths, W and lengths, L in accordance with aspects of the presentinvention. However, these adjustment procedures have some deficiencies.In one arrangement using aspects of this disclosure, the design ratio (Wto L) may be the same, however, different processing techniques may beused to adjust gate capacitance or adjust channel mobility, in order toalter performance to the desired level.

FIG. 2 illustrates one method of adjusting channel mobility of eachdevice. In step 200, an SRAM bit cell is produced having two pass-gatenFETs, two pull-down nFETs and two pull-up nFETs. In step 202,process-induced stress may be altered to adjust channel mobility forpull-down, pass-gate and pull-up FETs. In step 204, an SRAM bit cell isproduced with improved stability. For example, FIG. 3 illustrates anSRAM bit cell 300 according to one arrangement of the method shown inFIG. 2. In this configuration, a stress memorization technique is usedon pull-down FETs 304. However, the stress memorization technique is notused on pull-up FETs 306 or pass-gate FETs 302. This lack of processingthe pull-up FET's 306 or pass-gate FET's 306 while processing thepull-down FET's 304 may produce a large PD/PG beta ratio.

In the configuration of FIG. 3, a nitride layer 308 is deposited on thetransistor. A lithography or etching process may then be performed onthe device. The transistor is then subjected to a high temperatureannealing process, causing regions covered by the nitride 308 torecrystallize, introducing strain. In one arrangement, the hightemperature annealing process may include heating to temperaturesgreater than 1000° C. The nitride layer 308 is then removed, however,the strain remains. The stress memorization technique is used on nFETsto enhance uniaxial tensile stress. In this configuration, the techniquecan be used on pull-down nFETs 304 but not pass gate nFETs 302 toproduce a large PD/PG beta ratio. This high ratio may improve SRAMstability. Although this description of a stress memorization techniquemay be used, alternate methods of implementing a similar technique mayalso be used to provide similar results.

FIG. 4A illustrates another arrangement for adjusting channel mobility.It is generally known that nFETs with a narrow spacer can receive highertensile effect from a contact liner. In this configuration, a widespacer 408 may be used in the pass-gate nFET 402 but not in thepull-down nFET 404. These spacers may be formed in a variety of waysthat are generally known in the art. This configuration may provide ahigh PD/PG ratio, thereby providing increased SRAM stability.

FIG. 4B further illustrates the arrangement of FIG. 4A. A narrow spacer410 may be used with the pull-down field effect transistors 404 toprovide a higher tensile stress. In the arrangement shown in FIG. 4B,the narrow spacer 410 may be 10 to 30 μm, as in a conventionalarrangement. In addition, a wider spacer 412 is used with the pass-gatefield effect transistors 402. This arrangement may provide a lowertensile stress, thereby increasing the PD/PG ratio. In the arrangementshown, the wide spacer 412 used may be 30 to 60 μm.

FIG. 5 illustrates yet another arrangement for adjusting channelmobility. In the configuration of FIG. 5, germanium 508 may be implantedon tensile stress silicon nitride 510 in the pass-gate area 502, whileno germanium is implanted in the pull-down area 504. This may greatlyreduce or eliminate tensile stress effect in this region. The differencebetween the stress of the pass-gate region 502 and the stress of thepull-down region 504 may produce a high PD/PG beta ratio. This highratio may provide improved SRAM stability.

FIG. 6 illustrates yet another arrangement for adjusting channelmobility. In the configuration of FIG. 6, a compressive stress liner 608may be placed on the pull-up 606 and pass-gate transistors 602, while atensile stress liner 610 may be placed on the pull-down transistors 604.It is generally known that compressive stress degrades electron mobilitywhile it enhances hole mobility. Accordingly, the compressive stressliner 608 of the pass-gate 602 produces a high PD/PG ratio, therebyproviding improved SRAM stability.

FIG. 7 illustrates yet another arrangement for adjusting channelmobility to improve SRAM stability. In the configuration in FIG. 7,silicon germanium (SiGe) 708 may be embedded in the source/drain in thepull-up 706 and pass-gate transistors 702. This embedded SiGe 708 maycause uniaxial compressive stress in the Si channel 710. Accordingly, ahigh compressive stress is produced in the pass-gate region 702,producing a high PD/PG ratio. Again, this high beta ratio may provideimproved SRAM stability.

Gate Capacitance Adjustment

In addition to adjusting channel mobility to improve SRAM stability,gate capacitance of each device may be adjusted to achieve high SRAMyield. FIG. 8 illustrates one method of adjusting gate capacitance toproduce high yield SRAM cells. In step 800, an SRAM bit cell is producedhaving two pass-gate nFETs, two pull-down nFETs and two pull-up nFETs.In step 802, gate capacitance may be altered for pull-down, pass-gateand pull-up FETs. In step 804, a high yield SRAM cell is produced. Forexample, by using multi-oxide processes or implantation with varioustransistors, gate oxide thickness may be adjusted to enhance gatecapacitance. FIG. 9 illustrates one arrangement in which gatecapacitance is adjusted to achieve high SRAM yield. In the arrangementof FIG. 9, a thick gate oxide 908 may be used with the pass-gatetransistors 902, but not with the pull-up 906 or pull-down transistors904. This thick gate oxide 908 may be formed by a wet etching method orother techniques known in the art.

FIG. 10 illustrates another method of adjusting gate capacitance toachieve high SRAM yield. In the configuration of FIG. 10, phosphorouspre-doping 1008 is used in pull-down transistors 1004, but not inpass-gate 1002 or pull-up transistors 1006. It is generally known thatphosphorous pre-doping increases gate capacitance at high gate voltage.The processing of the pull-down transistors 1004, coupled with the lackof similar processing on the pass-gate 1002 or pull-up transistors 1006,may produce a high beta ratio. This high beta ratio may provide a higherSRAM yield when compared to conventional cell processes.

FIG. 11 illustrates yet another method of adjusting gate capacitance toachieve high SRAM yield. The configuration of FIG. 11 includes fluorinepre-doping 1108 in the pass-gate region 1102, but not in the pull-up1106 or pull-down regions 1104. It is generally known that fluorineimplanted after a poly-silicon deposition increases gate oxidethickness. In this configuration, the pass-gate transistors 1102 mayreceive fluorine pre-doping 1108, while the pull-up 1106 and pull-downregions 1104 may not. This processing of the pass-gate transistors 1102,coupled with the lack of similar processing of the pull-up 1106 andpull-down 1104 regions, may decrease the gate capacitance to provide ahigh SRAM yield.

FIG. 12 illustrates one example of the arrangements described above.Each of the devices 1202 a, 1202 b, 1202 c within a cell 1200 a, 1200 b,1200 c may have the same size and shape. However, various processingtechniques, as described above, may be used to alter the performance ofthe cell without altering the size and shape of the device.

Although the subject matter has been described in language specific tostructural features and/or methodological acts, it is to be understoodthat the subject matter defined in the appended claims is notnecessarily limited to the specific features or acts described above.Rather, the specific features and acts described above are disclosed asexample forms of implementing the claims. Numerous other embodiments,modifications and variations within the scope and spirit of the appendedclaims will occur to persons of ordinary skill in the art from a reviewof this disclosure.

1. A method of producing a semiconductor device, comprising the stepsof: forming source and drain regions for the semiconductor device havingtwo pull-down field effect transistors, two pass gate transistors andtwo pull-up field effect transistors on a substrate; and processing toadjust a channel mobility of at least one type of field effecttransistor.
 2. The method of producing a semiconductor device of claim1, wherein the step of processing to adjust the channel mobility of atleast one type of field effect transistor further includes: adding astress liner nitride, wherein the stress liner nitride is added to thepull-down field effect transistors; annealing a region covered by thestress liner nitride; removing the stress liner while maintaining strainimparted to the pull-down field effect transistors to provide increasedSRAM stability.
 3. The method of producing a semiconductor device ofclaim 1, wherein the step of processing to adjust the channel mobilityof at least one type of field effect transistor further includes using awide spacer with the pass-gate n-type field effect transistors.
 4. Themethod of producing a semiconductor device of claim 3, wherein the widespacer is at least 30 nm.
 5. The method of producing a semiconductordevice of claim 1, wherein the step of processing to adjust the channelmobility of at least one type of field effect transistor furtherincludes depositing a tensile stress silicon nitride layer andimplanting germanium on the tensile stress silicon nitride over apass-gate region.
 6. The method of producing a semiconductor device ofclaim 1, wherein the step of processing to adjust the channel mobilityof at least one type of field effect transistor further includes: addinga compressive stress liner to a pull-up field effect transistor regionand to a pass-gate field effect transistor region; and adding a tensilestress liner to a pull-down field effect transistor region.
 7. Themethod of producing a semiconductor device of claim 1, wherein the stepof processing to adjust the channel mobility of at least one type offield effect transistor further includes embedding silicon germanium inthe source drain of the pull-up field effect transistors and thepass-gate field effect transistors.
 8. The method of producing asemiconductor device of claim 1, wherein the pull-down field effecttransistors are n-type field effect transistors, the pass gatetransistors are n-type field effect transistors and the pull-up fieldeffect transistors are p-type field effect transistors.
 9. A method ofproducing a semiconductor device, comprising the steps of: formingsource and drain regions for the semiconductor device including twopull-down field effect transistors, two pass gate transistors and twopull-up field effect transistors on a substrate; and processing toadjust gate capacitance of at least one type of field effect transistor.10. The method of producing a semiconductor device of claim 9, whereinthe step of processing includes using a multi-oxide process to adjustgate oxide thickness.
 11. The method of producing a semiconductor deviceof claim 9, wherein the step of processing includes using implantationto adjust gate oxide thickness.
 12. The method of producing asemiconductor device of claim 9, wherein the step of processing includesforming a thick gate oxide in the pass-gate field effect transistorregion.
 13. The method of producing a semiconductor device of claim 12,wherein the thick gate oxide can be produced by a wet etching method.14. The method of producing a semiconductor device of claim 9, whereinthe step of processing includes using phosphorous pre-doping with thepull-down field effect transistors.
 15. The method of producing asemiconductor device of claim 9, wherein the step of processing includesusing fluorine pre-doping with the pass-gate field effect transistors.16. The method of producing a semiconductor device of claim 15, whereinthe fluorine is implanted after a polysilicon deposition to increasegate oxide thickness.
 17. The method of producing a semiconductor deviceof claim 9, wherein the pull-down field effect transistors are n-typefield effect transistors, the pass gate transistors are n-type fieldeffect transistors and the pull-up field effect transistors are p-typefield effect transistors.
 18. A semiconductor device, comprising: aplurality of p-type field effect transistors having channel regions; anda plurality of n-type field effect transistors having channel regions;wherein the field effect transistors have common width to length ratiosand at least some of the field effect transistors are processed to addrelative stress to the field effect transistors' channel regions. 19.The semiconductor device of claim 18, wherein the process to addrelative stress includes adjusting channel mobility.
 20. Thesemiconductor device of claim 18, wherein the process to add relativestress includes adjusting capacitance.